HXY MOSFET · FETs & Power MOSFETs · MPN 1N65G
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 4nC@10V |
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 19pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 6V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 9.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 119pF |
N-Channel 600V 1A 1W Surface Mount SOT-223