HXY MOSFET · FETs & Power MOSFETs · MPN 16N65
No reviews yet — be the first to review HXY MOSFET 16N65.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 54nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 18.5pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 218pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.442nF |
N-Channel 650V 16A 180W Surface Mount TO-263