Huixin · FETs & Power MOSFETs · MPN MMBT7002DW
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| Gate Charge(Qg) | 1.08nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 115mA |
| Output Capacitance(Coss) | 9pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200mW |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF |
| RDS(on) | 7.5Ω@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 22.5pF |
| Type | N-Channel |
60V 115mA 2.5V 200mW 7.5Ω@10V 2 N-Channel N-Channel SOT-363 Single FETs, MOSFETs RoHS