Huixin MJD122

Huixin · Transistors (BJTs) · MPN MJD122

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Specifications

Current - Collector Cutoff10uA
Vbe Saturation(VBE(sat))4.5V
Vbe On(VBE(on))2.8V
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation20W
typeNPN
Current - Collector(Ic)8A

Technical details

100V NPN 8A TO-252 Single Bipolar Transistors RoHS

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