Huixin · FETs & Power MOSFETs · MPN HXM10H03NSG
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 24pF |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 136mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
| Type | N-Channel |
100V 3A 1.5V 1.5W 136mΩ@10V 1 N-channel N-Channel SOT-23-6 Single FETs, MOSFETs RoHS