Huixin · FETs & Power MOSFETs · MPN HSCM0020065K
No reviews yet — be the first to review Huixin HSCM0020065K.
| Gate Charge(Qg) | 187nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 92A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 312W |
| RDS(on) | 20mΩ@18V |
| Number | 1 N-channel |
| Type | N-Channel |
650V 92A 2.6V 312W 20mΩ@18V 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS