Huixin · FETs & Power MOSFETs · MPN HD12N20L
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| Gate Charge(Qg) | 16nC@5V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 830pF |
| Type | N-Channel |
200V 9A 2V 2.5W 280mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS