Huixin · FETs & Power MOSFETs · MPN H80N10FB
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| Gate Charge(Qg) | 67nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 848pF |
| Current - Continuous Drain(Id) | 126A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 132W |
| RDS(on) | 3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.211nF |
| Type | N-Channel |
100V 126A 3V 132W 3mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS