Huixin · FETs & Power MOSFETs · MPN H5N50G
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 55pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 1.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 478pF |
| Type | N-Channel |
500V 5A 4V 52W 1.2Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS