Huixin H50P3FA

Huixin · FETs & Power MOSFETs · MPN H50P3FA

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)32nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation20W
RDS(on)9mΩ@10V;14mΩ@4.5V
Number1 P-Channel
TypeP-Channel

Technical details

30V 50A 1.5V 20W 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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