Huixin H50P06

Huixin · FETs & Power MOSFETs · MPN H50P06

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)719pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation95W
Reverse Transfer Capacitance (Crss@Vds)535pF
RDS(on)23mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.46nF
TypeP-Channel

Technical details

60V 50A 1.8V 95W 23mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs RoHS

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