Huixin · FETs & Power MOSFETs · MPN H40N25
No reviews yet — be the first to review Huixin H40N25.
| Gate Charge(Qg) | 63.6nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 463pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 56mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.35nF |
| Type | N-Channel |
250V 55A 5V 300W 56mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS