Huixin · FETs & Power MOSFETs · MPN H3N80D
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| Gate Charge(Qg) | 16nC@400V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 3.8Ω@10V |
| Number | 1 N-channel |
| Type | N-Channel |
800V 3A 4V 75W 3.8Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS