Huixin · FETs & Power MOSFETs · MPN H25N60F
No reviews yet — be the first to review Huixin H25N60F.
| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 25A |
| Output Capacitance(Coss) | 440pF |
| Operating Temperature - | -55℃~+150℃ |
| Pd - Power Dissipation | 35W |
| RDS(on) | 120mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Type | N-Channel |
600V 25A 35W 120mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS