Huixin · FETs & Power MOSFETs · MPN H20N50F
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Output Capacitance(Coss) | 290pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 230mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.92nF |
| Type | N-Channel |
500V 20A 3V 48W 230mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS