Huixin · FETs & Power MOSFETs · MPN H18N20D
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 9.8nC@10V |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 22pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 491pF |
| Type | N-Channel |
200V 18A 2.1V 83W 95mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS