Huixin · FETs & Power MOSFETs · MPN H14N10FBL
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 13.8A |
| Output Capacitance(Coss) | 32pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 75mΩ@10V;97mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 430pF |
| Type | N-Channel |
100V 13.8A 2.4V 35W 2 N-Channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS