Huixin · FETs & Power MOSFETs · MPN H12N90
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| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 72nC@10V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 750mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
| Type | N-Channel |
900V 12A 4V 300W 750mΩ@10V 1 N-channel N-Channel TO-3PB Single FETs, MOSFETs RoHS