Huixin · FETs & Power MOSFETs · MPN H12N65IK
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12.3A |
| Output Capacitance(Coss) | 54pF |
| Operating Temperature - | -55℃~+150℃ |
| Pd - Power Dissipation | 106W |
| RDS(on) | 278mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
650V 12.3A 106W 278mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS