Huixin · FETs & Power MOSFETs · MPN H12N60E
No reviews yet — be the first to review Huixin H12N60E.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.48nF |
600V 12A 4V 150W 1 N-channel TO-220AB Single FETs, MOSFETs RoHS