Huixin · FETs & Power MOSFETs · MPN H11N70D
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 11A |
| Output Capacitance(Coss) | 54pF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 101W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 330mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
| Type | N-Channel |
700V 11A 3V 101W 330mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS