Huixin · FETs & Power MOSFETs · MPN H10N65F
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 32W |
| RDS(on) | 800mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.62nF |
| Type | N-Channel |
650V 10A 4V 32W 800mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS