Huixin · FETs & Power MOSFETs · MPN H100N10FB
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 830pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 3mΩ@10V;4.3mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
| Type | N-Channel |
100V 100A 1.8V 125W 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS