Huixin · FETs & Power MOSFETs · MPN H08P6D
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| Gate Charge(Qg) | 15.8nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 8.8A |
| Output Capacitance(Coss) | 28pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 496pF |
60V 8.8A 1.6V 42W 160mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS