HUAYI · FETs & Power MOSFETs · MPN HYG800P10LR1S
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| Gate Charge(Qg) | 53.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 5.4W |
| RDS(on) | 80mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.307nF |
P-Channel 100V 8A 5.4W Surface Mount SOP-8L