HUAYI · FETs & Power MOSFETs · MPN HYG800P10LR1D
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| Gate Charge(Qg) | 42.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 111pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF |
| RDS(on) | 110mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.273nF |
| Type | P-Channel |
P-Channel 100V 20A 75W Surface Mount TO-252-2L