HUAYI · FETs & Power MOSFETs · MPN HYG420N06LR1D
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| Gate Charge(Qg) | 16nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 37.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| RDS(on) | 50mΩ@4.5V |
| Number | - |
| Input Capacitance(Ciss) | 843pF |
| Type | N-Channel |
60V 22A 2.5V 37.5W 50mΩ@4.5V N-Channel TO-252 Single FETs, MOSFETs RoHS