HUAYI · FETs & Power MOSFETs · MPN HYG400P10LR1D
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| Gate Charge(Qg) | 83.1nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 189pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 111pF |
| RDS(on) | 63mΩ@4.5V |
| Number | - |
| Input Capacitance(Ciss) | 5.003nF |
| Type | P-Channel |
100V 40A 100W 63mΩ@4.5V P-Channel TO-252-2 Single FETs, MOSFETs RoHS