HUAYI HYG400N15NS1P

HUAYI · FETs & Power MOSFETs · MPN HYG400N15NS1P

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Specifications

Drain to Source Voltage150V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation115W
RDS(on)34mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number1 N-channel
Input Capacitance(Ciss)2.14nF

Technical details

N-Channel 150V 40A 115W Through Hole TO-220FB-3L

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