HUAYI · FETs & Power MOSFETs · MPN HYG400N15NS1P
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| Drain to Source Voltage | 150V |
|---|---|
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 115W |
| RDS(on) | 34mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.14nF |
N-Channel 150V 40A 115W Through Hole TO-220FB-3L