HUAYI · FETs & Power MOSFETs · MPN HYG400N15NS1D
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| RDS(on) | 34mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.14nF |
150V 30A 4V 34mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS