HUAYI · FETs & Power MOSFETs · MPN HYG350P13NA1B
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| Gate Charge(Qg) | 79.4nC@10V |
|---|---|
| Drain to Source Voltage | 125V |
| Output Capacitance(Coss) | 285pF |
| Current - Continuous Drain(Id) | 39A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 120W |
| RDS(on) | 43mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 194.8pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.118nF |
| Type | P-Channel |
P-Channel 125V 39A 120W Surface Mount TO-263-2