HUAYI · FETs & Power MOSFETs · MPN HYG260P03LR1S
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| Gate Charge(Qg) | 18.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| RDS(on) | 30mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.21nF |
| Type | P-Channel |
30V 8A 3V 3W 30mΩ@10V P-Channel SOP-8 Single FETs, MOSFETs RoHS