HUAYI · FETs & Power MOSFETs · MPN HYG210P06LQ1D
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| Gate Charge(Qg) | 90nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 123pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 32mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.679nF |
| Type | P-Channel |
P-Channel 60V 40A 60W Surface Mount TO-252-2L