HUAYI · FETs & Power MOSFETs · MPN HYG200P10LR1B
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| Gate Charge(Qg) | 181nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Output Capacitance(Coss) | 278pF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 91pF |
| RDS(on) | 32mΩ@4.5V |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 100V 80A 214W Surface Mount TO-263-2L