HUAYI · FETs & Power MOSFETs · MPN HYG200N12NS1P
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| Drain to Source Voltage | 120V |
|---|---|
| Gate Charge(Qg) | 33.1nC@10V |
| Output Capacitance(Coss) | 327pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.35nF |
| Type | N-Channel |
N-Channel 120V 60A 125W Through Hole TO-220FB-3