HUAYI · FETs & Power MOSFETs · MPN HYG200N12NS1C2
No reviews yet — be the first to review HUAYI HYG200N12NS1C2.
| Gate Charge(Qg) | 33.4nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 333pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 16.7pF |
| RDS(on) | 18.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.31nF |
| Type | N-Channel |
120V 60A 4V 125W 18.5mΩ@10V 1 N-channel N-Channel PDFN-8(5x5.8) Single FETs, MOSFETs RoHS