HUAYI HYG190P13NA1P

HUAYI · FETs & Power MOSFETs · MPN HYG190P13NA1P

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Specifications

Drain to Source Voltage125V
Current - Continuous Drain(Id)72A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)430pF
RDS(on)18mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)8.348nF

Technical details

P-Channel 125V 72A 230W Through Hole TO-220FB-3L

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