HUAYI · FETs & Power MOSFETs · MPN HYG190P13NA1B
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 125V |
| Output Capacitance(Coss) | 572pF |
| Current - Continuous Drain(Id) | 72A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 230W |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF |
| RDS(on) | 24mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8.348nF |
| Type | P-Channel |
125V 72A 3.5V 230W 24mΩ@10V 1 P-Channel P-Channel TO-263-2 Single FETs, MOSFETs RoHS