HUAYI · FETs & Power MOSFETs · MPN HYG180N10LS1P
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| Gate Charge(Qg) | 24.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 476pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 93.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 22.8pF |
| RDS(on) | 34mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.606nF |
| Type | N-Channel |
N-Channel 100V 50A 93.7W Through Hole TO-220FB-3