HUAYI · FETs & Power MOSFETs · MPN HYG180N10LS1C2
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 23.8nC@10V |
| Current - Continuous Drain(Id) | 46A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 83.3W |
| RDS(on) | 16.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 21.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.548nF |
N-Channel 100V 46A 83.3W Surface Mount PDFN-8(5x6)