HUAYI · FETs & Power MOSFETs · MPN HYG170ND03LA1S
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 19.7mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 354pF |
N-Channel Array 30V 9A 2.5W Surface Mount SOP-8