HUAYI · FETs & Power MOSFETs · MPN HYG170N03LR1C2
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 9.5nC@10V |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 20W |
| RDS(on) | 21.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 412pF |
30V 24A 1.9V 20W 21.5mΩ@4.5V 1 N-channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS