HUAYI · FETs & Power MOSFETs · MPN HYG170C03LR1S
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| Gate Charge(Qg) | 18.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.21nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 9.5A 3W Surface Mount SOP-8