HUAYI · FETs & Power MOSFETs · MPN HYG161P10LA1S
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 5.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 200mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.376nF |
| Type | P-Channel |
100V 6A 3V 5.4W 200mΩ@4.5V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS