HUAYI · FETs & Power MOSFETs · MPN HYG120P06LR1D
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| Gate Charge(Qg) | 91.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 285pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.882nF |
| Type | P-Channel |
P-Channel 60V 55A 75W Surface Mount TO-252