HUAYI · FETs & Power MOSFETs · MPN HYG120P06LR1C2
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 95nC@10V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF |
| RDS(on) | 11mΩ@10V |
| Input Capacitance(Ciss) | 4.66nF |
| Type | P-Channel |
60V 55A 2.5V 75W 11mΩ@10V P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS