HUAYI · FETs & Power MOSFETs · MPN HYG110P04LQ2D
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| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 253pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 57.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 13mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.468nF |
| Type | P-Channel |
P-Channel 40V 50A 57.7W Surface Mount TO-252-2L