HUAYI · FETs & Power MOSFETs · MPN HYG110N11LS1C2
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| Drain to Source Voltage | 115V |
|---|---|
| Gate Charge(Qg) | 45.5nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 71.4W |
| RDS(on) | 19mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.606nF |
| Type | N-Channel |
N-Channel 115V 60A 71.4W Surface Mount PDFN-8(4.9x5.8)