HUAYI · FETs & Power MOSFETs · MPN HYG101N10LA1D
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| Gate Charge(Qg) | 26nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 62pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 51.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 150mΩ@4.5V |
| Number | - |
| Input Capacitance(Ciss) | 1.072nF |
| Type | N-Channel |
N-Channel 100V 15A 51.7W Surface Mount TO-252-2L