HUAYI · FETs & Power MOSFETs · MPN HYG092N10LS1C2
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 437pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 12.4pF |
| RDS(on) | 14mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.348nF |
| Type | N-Channel |
100V 60A 3V 62.5W 14mΩ@4.5V 1 N-channel N-Channel PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS